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Table 2
Exposure time, texp, and dip stage averaged count rates for the total observations and silicon (1.605–2.045 keV ≡ 7.725–6.063 Å) and sulfur (2.295–2.7 keV ≡ 5.402–4.6 Å) bands for all observations.
| Counts | |||||
|---|---|---|---|---|---|
| texp | Total | Si | S | ||
| (ks) | (103 counts s−1) | ||||
| 3814 | Non-dip | 21.096 | 1838 | 37 | 92 |
| Weak dip | 6.095 | 445 | 10 | 26 | |
| Dip | 7.345 | 461 | 13 | 31 | |
| Strong dip | 12.559 | 458 | 21 | 49 | |
| 8525 | Non-dip | 5.079 | 450 | 11 | 22 |
| Weak dip | 5.313 | 394 | 11 | 26 | |
| Dip | 6.834 | 406 | 13 | 28 | |
| Strong dip | 12.200 | 401 | 20 | 41 | |
| 9847 | Non-dip | 4.880 | 499 | 12 | 24 |
| Weak dip | 3.273 | 294 | 8 | 16 | |
| Dip | 4.083 | 307 | 9 | 19 | |
| Strong dip | 6.618 | 303 | 15 | 29 | |
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